Directed synthesis and formation of the defects in thin films PbTe

Abstract

We have determined the technological factors in the hot wall technique that determine the conditions of PbTe thin films with pre-assigned parameters. We have proposed the model that describes the processes of growth of PbTe thin films from the vapour phase. The general equations, that set the connection between the charge carriers concentration (I1), inversion (n-p transition) temperature (T*) of precipitation, evaporation temperature (T~) of the sample, the pressure of the vapour of the components (PTe) and condensation temperature (T~) have been obtained. We have shown that the formation of defects like PbTei + - V2g - is predominant in PbTe thin films grown from the vapour phase.